AN ION-IMPLANTATION MODEL INCORPORATING DAMAGE CALCULATIONS IN CRYSTALLINE TARGETS

被引：23

作者：

CRANDLE, TL ^{[1
]}

MULVANEY, BJ ^{[1
]}

机构：

[1] MICROELECTR & COMP TECHNOL CORP,AUSTIN,TX 78759

来源：

IEEE ELECTRON DEVICE LETTERS | 1990年 / 11卷 / 01期

关键词：

D O I：

10.1109/55.46925

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A computer simulation for modeling ion implantation has been developed which incorporates the effects of channeling and damage. The simulation calculates the trajectories of implanted ions through an idealized crystal structure. Secondary generation is modeled using a damage threshold energy. The concentration of interstitials which results is used as a measure of the damage sustained by the target. The accumulated damage is used as a criterion for whether the substrate is treated as amorphous or crystalline. Modeling the crystalline-to-amorphous transition in this manner enables simulation of dose-dependent implantation. The model accounts for temperature-dependent self-annealing using an empirically determined temperature-dependent damage threshold. © 1990 IEEE

引用

页码：42 / 44

页数：3

共 16 条

[1] A MONTE-CARLO COMPUTER-PROGRAM FOR THE TRANSPORT OF ENERGETIC IONS IN AMORPHOUS TARGETS [J].