DEFECT STUDY IN GAAS BOMBARDED BY LOW-ENERGY FOCUSED ION-BEAMS

被引：28

作者：

GAMO, K ^{[1
]}

MIYAKE, H ^{[1
]}

YUBA, Y ^{[1
]}

NAMBA, S ^{[1
]}

KASAHARA, H ^{[1
]}

SAWARAGI, H ^{[1
]}

AIHARA, R ^{[1
]}

机构：

[1] JEOL LTD,TOKYO 196,JAPAN

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1988年 / 6卷 / 06期

关键词：

D O I：

10.1116/1.584098

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：2124 / 2127

页数：4

共 8 条

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GAMO, K
AOKI, K
MASUDA, K
NAMBA, S
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1971, 10 (08) : 1118 - &
[2] GRANT A, 1974, RADIAT EFF, V23, P165
[3] Harris J. S., 1971, ION IMPLANTATION SEM, P157
[4] A 0-30 KEV LOW-ENERGY FOCUSED ION-BEAM SYSTEM
KASAHARA, H
SAWARAGI, H
AIHARA, R
GAMO, K
NAMBA, S
SHEARER, MH
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1988, 6 (03): : 974 - 976
[5] MARTIN GM, 1977, ELECTRON LETT, V13, P193
[6] DEFECTS INDUCED BY FOCUSED ION-BEAM IMPLANTATION IN GAAS
MIYAKE, H
YUBA, Y
GAMO, K
NAMBA, S
SHIOKAWA, T
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1988, 6 (03): : 1001 - 1005
[7] A VARIABLE ENERGY FOCUSED ION-BEAM SYSTEM FOR INSITU MICROFABRICATION
NARUM, DH
PEASE, RFW
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1988, 6 (03): : 966 - 973
[8] Vook F. L., 1971, ION IMPLANTATION SEM, P141