FABRICATION OF SUBMICRON NB/ALOX-AL/NB TUNNEL-JUNCTIONS USING FOCUSED ION-BEAM IMPLANTED NB PATTERNING (FINP) TECHNIQUE

被引:11
作者
AKAIKE, H
WATANABE, T
NAGAI, N
FUJIMAKI, A
HAYAKAWA, H
机构
[1] Department of Electronics, Faculty of Engineering, Nagoya University, Furo-cho, Chikusa-ku
关键词
D O I
10.1109/77.403047
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We have successfully fabricated 0.2 mu m(2) Nb/AlOx/Nb tunnel junctions using the focused-ion-beam implanted Nb patterning (FINP) technique for junction definition. The success was due to improvement of the edge profile of the counter electrode. The vertical edge profile was realized with the large etching selectivity of Ga implanted Nb over unimplanted Nb by controlling the reactive neutrals in the plasma. The critical current I-c and the quality parameter V-m of 0.2 mu m(2) junctions were 10.5 mu A and 11 mV, respectively. The R(sg)/R(n) was 12. The maximum to minimum spread in I-c of 60 series junctions with areas of 0.5 mu m(2) was +/- 10 %.
引用
收藏
页码:2310 / 2313
页数:4
相关论文
共 9 条
[1]   FABRICATION OF Nb/AlOx/Nb TUNNEL JUNCTIONS USING FOCUSED ION BEAM IMPLANTED Nb PATTERNING (FINP) TECHNIQUE [J].
Akaike, H. ;
Fujimaki, A. ;
Takai, Y. ;
Hayakawa, H. .
IEEE TRANSACTIONS ON APPLIED SUPERCONDUCTIVITY, 1993, 3 (01) :2187-2190
[2]   SUBMICROMETER-SCALE PATTERNING OF SUPERCONDUCTING NB FILMS USING FOCUSED ION-BEAM [J].
AKAIKE, H ;
FUJIMAKI, A ;
TAKAI, Y ;
HAYAKAWA, H .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1992, 31 (4A) :L410-L412
[3]  
AKAIKE H, IN PRESS JPN J APPLP
[4]  
GAMO K, 1994, JPN J APPL PHYS, V23, pL642
[5]   HIGH-SPEED JOSEPHSON INTEGRATED-CIRCUIT TECHNOLOGY [J].
HASUO, S .
IEEE TRANSACTIONS ON MAGNETICS, 1989, 25 (02) :740-749
[6]   PLANARIZATION OF PATTERNED SURFACES BY ION-BEAM EROSION [J].
JOHNSON, LF ;
INGERSOLL, KA ;
KAHNG, D .
APPLIED PHYSICS LETTERS, 1982, 40 (07) :636-638
[7]   DEEP SUB-mu m LOW-Tc JOSEPHSON TECHNOLOGY: THE OPPORTUNITIES AND THE CHALLENGES [J].
Ketchen, M. B. .
IEEE TRANSACTIONS ON APPLIED SUPERCONDUCTIVITY, 1993, 3 (01) :2586-2593
[8]   SUB-MU-M, PLANARIZED, NB-ALOX-NB JOSEPHSON PROCESS FOR 125-MM WAFERS DEVELOPED IN PARTNERSHIP WITH SI TECHNOLOGY [J].
KETCHEN, MB ;
PEARSON, D ;
KLEINSASSER, AW ;
HU, CK ;
SMYTH, M ;
LOGAN, J ;
STAWIASZ, K ;
BARAN, E ;
JASO, M ;
ROSS, T ;
PETRILLO, K ;
MANNY, M ;
BASAVAIAH, S ;
BRODSKY, S ;
KAPLAN, SB ;
GALLAGHER, WJ ;
BHUSHAN, M .
APPLIED PHYSICS LETTERS, 1991, 59 (20) :2609-2611
[9]   NIOBIUM TRILAYER JOSEPHSON TUNNEL-JUNCTIONS WITH ULTRAHIGH CRITICAL-CURRENT DENSITIES [J].
MILLER, RE ;
MALLISON, WH ;
KLEINSASSER, AW ;
DELIN, KA ;
MACEDO, EM .
APPLIED PHYSICS LETTERS, 1993, 63 (10) :1423-1425