IMPURITY EFFECTS ON CONDUCTION IN HEAVILY DOPED N-TYPE SILICON

[1] IMPURITY BANDS IN MODERATELY DOPED SEMICONDUCTORS AND THEIR EFFECT ON MOS C-V FREEZE-OUT CHARACTERISTICS [J]. SOLID-STATE ELECTRONICS, 1976, 19 (05) : 365 - 368

[2] BONCHBRUEVICH VL, 1966, ELECTRON THEORY HEAV

[3] DUNBAR PM, 1975, IEEE PHOTOVOLTAIC SP

[4] FINETTI M, 1976, J APPL PHYS, V47, P4590, DOI 10.1063/1.322383

[5] Fistul' V.I., 1969, HEAVILY DOPED SEMICO, VVolume 1

[6] KLEPPING.DD, 1971, SOLID STATE ELECTRON, V14, P407, DOI 10.1016/0038-1101(71)90191-2

[7] IMPURITY CONCENTRATION DEPENDENCE OF DENSITY OF STATES IN SEMICONDUCTORS [J]. SOLID-STATE ELECTRONICS, 1971, 14 (03) : 199 - +

[8] VARIATION OF IMPURITY-TO-BAND ACTIVATION-ENERGIES WITH IMPURITY DENSITY [J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (01) : 373 - 380

[9] LINDHOLM FA, 1975, IEEE PHOTOVOLTAIC SP

[10] MORGAN TM, 1968, PHYS REV, V148, P722

[1] IMPURITY BANDS IN MODERATELY DOPED SEMICONDUCTORS AND THEIR EFFECT ON MOS C-V FREEZE-OUT CHARACTERISTICS [J]. SOLID-STATE ELECTRONICS, 1976, 19 (05) : 365 - 368

[2] BONCHBRUEVICH VL, 1966, ELECTRON THEORY HEAV

[3] DUNBAR PM, 1975, IEEE PHOTOVOLTAIC SP

[4] FINETTI M, 1976, J APPL PHYS, V47, P4590, DOI 10.1063/1.322383

[5] Fistul' V.I., 1969, HEAVILY DOPED SEMICO, VVolume 1

[6] KLEPPING.DD, 1971, SOLID STATE ELECTRON, V14, P407, DOI 10.1016/0038-1101(71)90191-2

[7] IMPURITY CONCENTRATION DEPENDENCE OF DENSITY OF STATES IN SEMICONDUCTORS [J]. SOLID-STATE ELECTRONICS, 1971, 14 (03) : 199 - +

[8] VARIATION OF IMPURITY-TO-BAND ACTIVATION-ENERGIES WITH IMPURITY DENSITY [J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (01) : 373 - 380

[9] LINDHOLM FA, 1975, IEEE PHOTOVOLTAIC SP

[10] MORGAN TM, 1968, PHYS REV, V148, P722