SELF-CONSISTENT CALCULATION OF ELECTRONIC-STRUCTURE OF SILICON AND GERMANIUM USING INTERSECTING-SPHERES MODEL

被引：18

作者：

ANTOCI, S ^{[1
]}

MIHICH, L ^{[1
]}

机构：

[1] CNR,NAZL STRUTTURA MAT GRUPPO,PAVIA,ITALY

来源：

PHYSICAL REVIEW B | 1978年 / 17卷 / 04期

关键词：

D O I：

10.1103/PhysRevB.17.1859

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：1859 / 1864

页数：6

共 22 条

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