EXTREMELY LOW-THRESHOLD 1.3 MU-M GAINASP-INP DFB PPIBH LASER

被引：8

作者：

OHKURA, Y

YOSHIDA, N

TAKEMOTO, A

KAKIMOTO, S

机构：

来源：

ELECTRONICS LETTERS | 1988年 / 24卷 / 24期

关键词：

D O I：

10.1049/el:19881030

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

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页码：1508 / 1510

页数：3

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[4] 1 GBIT/S AUTOMATIC-POWER-CONTROL-FREE ZERO-BIAS MODULATION OF VERY-LOW THRESHOLD MQW LASER-DIODES
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[J]. ELECTRONICS LETTERS, 1987, 23 (25) : 1352 - 1353
[5] 1.3 MU-M INGAASP/INP DISTRIBUTED-FEEDBACK P-SUBSTRATE PARTIALLY INVERTED BURIED-HETEROSTRUCTURE LASER DIODE
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[J]. ELECTRONICS LETTERS, 1987, 23 (11) : 546 - 547
[6] SINUSOIDAL AND DIGITAL HIGH-SPEED MODULATION OF P-TYPE SUBSTRATE MASS-TRANSPORTED DIODE-LASERS
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[J]. JOURNAL OF LIGHTWAVE TECHNOLOGY, 1987, 5 (03) : 300 - 304