LOW THRESHOLD CURRENT GAINASP-INP DFB LASERS

被引：7

作者：

ITAYA, Y

SAITO, H

MOTOSUGI, G

TOHMORI, Y

机构：

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1987年 / 23卷 / 06期

关键词：

D O I：

10.1109/JQE.1987.1073437

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：828 / 834

页数：7

相关论文

共 31 条

[1] INGAASP-INP BURIED-HETEROSTRUCTURE LASERS (LAMBDA=1.5-MU-M) WITH CHEMICALLY ETCHED MIRRORS [J].

ADACHI, S ;

KAWAGUCHI, H ;

TAKAHEI, K ;

NOGUCHI, Y .

JOURNAL OF APPLIED PHYSICS, 1981, 52 (09) :5843-5845

[2] MONOLITHIC INTEGRATION OF INGAASP/INP SEMICONDUCTOR-LASERS USING THE STOP-CLEAVING TECHNIQUE [J].

ANTREASYAN, A ;

NAPHOLTZ, SG ;

WILT, DP ;

GARBINSKI, PA .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1986, 22 (07) :1064-1072

[3] THE EFFECTS OF LOSS AND NONRADIATIVE RECOMBINATION ON THE TEMPERATURE-DEPENDENCE OF THRESHOLD CURRENT IN 1.5-1.6-MU-M GALNASP/INP LASERS [J].

ASADA, M ;

SUEMATSU, Y .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1983, 19 (06) :917-923

[4] THE TEMPERATURE-DEPENDENCE OF THE THRESHOLD CURRENT OF GAINASP-INP DH LASERS [J].

ASADA, M ;

ADAMS, AR ;

STUBKJAER, KE ;

SUEMATSU, Y ;

ITAYA, Y ;

ARAI, S .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1981, 17 (05) :611-619

[5] CAVITY LENGTH DEPENDENCE OF DIFFERENTIAL QUANTUM EFFICIENCY OF GAINASP-INP LASERS [J].

ASADA, M ;

ITOH, K ;

SUEMATSU, Y ;

ARAI, S .

ELECTRONICS LETTERS, 1981, 17 (14) :486-487

[6] EXTREMELY LOW THRESHOLD CURRENT 1.52-MU-M INGAASP/INP MS-DFB LASERS WITH 2ND-ORDER GRATING [J].

BURKHARD, H ;

KUPHAL, E ;

DINGES, HW .

ELECTRONICS LETTERS, 1986, 22 (15) :802-803

[7] SHORT-CAVITY SINGLE-MODE 1.3 MU-INGAASP LASERS WITH EVAPORATED HIGH-REFLECTIVITY MIRRORS [J].

BURRUS, CA ;

LEE, TP ;

DENTAI, AG .

ELECTRONICS LETTERS, 1981, 17 (25-2) :954-956

[8] GALNASP-INP STRIPE-GEOMETRY LASER WITH A REACTIVE-ION-ETCHED FACET [J].

COLDREN, LA ;

IGA, K ;

MILLER, BI ;

RENTSCHLER, JA .

APPLIED PHYSICS LETTERS, 1980, 37 (08) :681-683

[9] GENERALIZED EXPRESSIONS FOR THE TURN-ON DELAY IN SEMICONDUCTOR-LASERS [J].

DIXON, RW ;

JOYCE, WB .

JOURNAL OF APPLIED PHYSICS, 1979, 50 (07) :4591-4595

[10] EVIDENCE OF THE IMPORTANCE OF AUGER RECOMBINATION FOR INGAASP LASERS [J].

HAUG, A .

ELECTRONICS LETTERS, 1984, 20 (02) :85-86

← 1 2 3 4 →