ELECTRICAL-PROPERTIES OF SCHOTTKY-BARRIER FORMED ON AS-GROWN AND OXIDIZED SURFACE OF HOMOEPITAXIALLY GROWN DIAMOND(001) FILM

被引：63

作者：

KIYOTA, H

MATSUSHIMA, E

SATO, K

OKUSHI, H

ANDO, T

KAMO, M

SATO, Y

LIDA, M

机构：

[1] ELECTROTECH LAB,TSUKUBA,IBARAKI 305,JAPAN

[2] NATL INST RES INORGAN MAT,TSUKUBA,IBARAKI 305,JAPAN

[3] TOKAI UNIV,SCH ENGN,HIRATSUKA,KANAGAWA 25912,JAPAN

来源：

APPLIED PHYSICS LETTERS | 1995年 / 67卷 / 24期

关键词：

D O I：

10.1063/1.115329

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Characteristics of Schottky barriers formed on homoepitaxial diamond film have been studied. Current-voltage characteristics of Al contacts on both the as-grown film and the oxidized film show rectification. On the other hand, ohmic property is observed on Au/as-grown film while Au/oxidized film shows rectification. These results imply that the mechanism of the barrier formation on the as-grown diamond is drastically changed by oxidation. The difference of electrical properties between the as-grown film and the oxidized film is also observed from capacitance-voltage characteristics. This result suggests that additional accepters which are not related to boron, exist in the as-grown film and disappear after oxidation. (C) 1995 American Institute of Physics.

引用

页码：3596 / 3598

页数：3

共 14 条

[1] HIGH-RESOLUTION ELECTRON-ENERGY-LOSS SPECTROSCOPIC STUDY OF EPITAXIALLY GROWN DIAMOND (111) AND (100) SURFACES
AIZAWA, T
ANDO, T
KAMO, M
SATO, Y
[J]. PHYSICAL REVIEW B, 1993, 48 (24): : 18348 - 18351
[2] VAPOR-PHASE OXIDATION OF DIAMOND SURFACES IN O2 STUDIED BY DIFFUSE-REFLECTANCE FOURIER-TRANSFORM INFRARED AND TEMPERATURE-PROGRAMMED DESORPTION SPECTROSCOPY
ANDO, T
YAMAMOTO, K
ISHII, M
KAMO, M
SATO, Y
[J]. JOURNAL OF THE CHEMICAL SOCIETY-FARADAY TRANSACTIONS, 1993, 89 (19): : 3635 - 3640
[3] ELECTRIC PROPERTIES OF METAL DIAMOND INTERFACES UTILIZING HYDROGEN-TERMINATED SURFACES OF HOMOEPITAXIAL DIAMONDS
AOKI, M
KAWARADA, H
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1994, 33 (5B): : L708 - L711
[4] OBSERVATION OF SURFACE-CHARGE SCREENING AND FERMI-LEVEL PINNING ON A SYNTHETIC, BORON-DOPED DIAMOND
BAKER, SM
ROSSMAN, GR
BALDESCHWIELER, JD
[J]. JOURNAL OF APPLIED PHYSICS, 1993, 74 (06) : 4015 - 4019
[5] C-V CHARACTERISTICS OF SCHOTTKY BARRIERS ON LABORATORY GROWN SEMICONDUCTING DIAMONDS
GLOVER, GH
[J]. SOLID-STATE ELECTRONICS, 1973, 16 (09) : 973 - +
[6] ENHANCEMENT-MODE METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS USING HOMOEPITAXIAL DIAMONDS
KAWARADA, H
AOKI, M
ITO, M
[J]. APPLIED PHYSICS LETTERS, 1994, 65 (12) : 1563 - 1565
[7] HYDROGEN PASSIVATION OF ELECTRICALLY ACTIVE DEFECTS IN DIAMOND
LANDSTRASS, MI
RAVI, KV
[J]. APPLIED PHYSICS LETTERS, 1989, 55 (14) : 1391 - 1393
[8] MAKI T, 1992, JPN J APPL PHYS 2, V31, pL1446, DOI 10.1143/JJAP.31.L1446
[9] SCHOTTKY-BARRIER HEIGHTS ON P-TYPE DIAMOND AND SILICON-CARBIDE (6H)
MEAD, CA
MCGILL, TC
[J]. PHYSICS LETTERS A, 1976, 58 (04) : 249 - 251
[10] PROPERTIES OF METAL DIAMOND INTERFACES AND EFFECTS OF OXYGEN ADSORBED ONTO DIAMOND SURFACE
MORI, Y
KAWARADA, H
HIRAKI, A
[J]. APPLIED PHYSICS LETTERS, 1991, 58 (09) : 940 - 941

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