PICOSECOND TIME-RESOLVED RAMAN STUDIES OF THE EXPANSION OF THE ELECTRON-HOLE PLASMA IN SI

被引：9

作者：

TSEN, KT

机构：

来源：

PHYSICAL REVIEW B | 1987年 / 35卷 / 08期

关键词：

D O I：

10.1103/PhysRevB.35.4134

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：4134 / 4136

页数：3

共 6 条

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KANE, EO
[J]. PHYSICAL REVIEW B, 1977, 16 (08): : 3579 - 3595
[2] OPTICAL STUDIES OF FAST PLASMA TRANSPORT IN SI
FORCHEL, A
LAURICH, B
HILLMER, H
TRANKLE, G
PILKUHN, M
[J]. JOURNAL OF LUMINESCENCE, 1985, 30 (1-4) : 67 - 81
[3] OPTICAL-PROPERTIES OF FAST-DIFFUSING SOLID-STATE PLASMAS
FORCHEL, A
SCHWEIZER, H
MAHLER, G
[J]. PHYSICAL REVIEW LETTERS, 1983, 51 (06) : 501 - 504
[4] ELECTRONIC RAMAN-SCATTERING AND METAL-INSULATOR-TRANSITION IN DOPED SILICON
JAIN, K
LAI, S
KLEIN, MV
[J]. PHYSICAL REVIEW B, 1976, 13 (12): : 5448 - 5464
[5] Klein M.V., 1975, LIGHT SCATTERING SOL
[6] STERANKA FM, 1985, PHYS REV LETT, V55, P95