A COMPARATIVE-STUDY OF SILICON DEPOSITION FROM SICL4 IN COLD-PLASMA USING ARGON, H-2 OR AR+H2

被引：7

作者：

MANORY, RR

CARMI, U

AVNI, R

GRILL, A

机构：

[1] BEN GURION UNIV NEGEV,DEPT MAT ENGN,IL-84105 BEERSHEBA,ISRAEL

[2] NUCL RES CTR NEGEV,DIV CHEM,IL-84190 BEERSHEBA,ISRAEL

来源：

THIN SOLID FILMS | 1988年 / 156卷 / 01期

关键词：

D O I：

10.1016/0040-6090(88)90284-2

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：79 / 92

页数：14

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