THE INFLUENCE OF ARGON ADDITION ON THE DEPOSITION AND PROPERTIES OF SI H, CL FILMS PREPARED IN A GLOW-DISCHARGE

被引:8
作者
BRUNO, G
CAPEZZUTO, P
CICALA, G
CRAMAROSSA, F
机构
关键词
D O I
10.1016/0040-6090(86)90131-8
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:245 / 250
页数:6
相关论文
共 11 条
[1]  
BRODSKY MH, 1977, PHYS REV B, V16, P3556, DOI 10.1103/PhysRevB.16.3556
[2]   RF PLASMA DEPOSITION OF AMORPHOUS-SILICON FILMS FROM SICL4-H2 [J].
BRUNO, G ;
CAPEZZUTO, P ;
CRAMAROSSA, F ;
DAGOSTINO, R .
THIN SOLID FILMS, 1980, 67 (01) :103-107
[3]   DEPOSITION RATE AND STRUCTURAL-PROPERTIES OF MICROCRYSTALLINE GLOW-DISCHARGE SI-H,CL FILMS [J].
BRUNO, G ;
CAPEZZUTO, P ;
CRAMAROSSA, F .
THIN SOLID FILMS, 1983, 106 (03) :145-152
[4]  
BRUNO G, 1984, 1984 P EUR MAT RES S, P479
[5]   DEPOSITION TECHNIQUES AND APPLICATIONS OF AMORPHOUS-SILICON FILMS [J].
CRAMAROSSA, F ;
CAPEZZUTO, P .
MATERIALS CHEMISTRY AND PHYSICS, 1983, 9 (1-3) :213-233
[6]  
d'Agostino R., 1984, Plasma Chemistry and Plasma Processing, V4, P165, DOI 10.1007/BF00566839
[7]   NOVEL DEPOSITION TECHNIQUE OF A-SI-H - SILANE GLOW-DISCHARGE IN MAGNETIC-FIELD [J].
HAMASAKI, T ;
HIROSE, M ;
KURATA, H ;
TANIGUCHI, M ;
OSAKA, Y .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (01) :281-285
[8]   GROWTH-MORPHOLOGY AND DEFECTS IN PLASMA-DEPOSITED A-SI-H FILMS [J].
KNIGHTS, JC .
JOURNAL OF NON-CRYSTALLINE SOLIDS, 1980, 35-6 (JAN-) :159-170
[9]   ELECTRICAL AND OPTICAL-PROPERTIES OF AMORPHOUS SI-F-H ALLOYS [J].
MADAN, A ;
OVSHINSKY, SR ;
BENN, E .
PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1979, 40 (04) :259-277
[10]  
Manory R., 1983, Plasma Chemistry and Plasma Processing, V3, P235, DOI 10.1007/BF00566022