EFFECTIVE-MASS AND QUANTUM LIFETIME IN A SI/SI0.87GE0.13/SI 2-DIMENSIONAL HOLE GAS

被引：34

作者：

WHALL, TE

MATTEY, NL

PLEWS, AD

PHILLIPS, PJ

MIRONOV, OA

NICHOLAS, RJ

KEARNEY, MJ

机构：

[1] UKRAINIAN ACAD SCI,INST RADIOPHYS & ELECTR,KHARKOV,UKRAINE

[2] UNIV OXFORD,CLARENDON LAB,OXFORD OX1 3PU,ENGLAND

[3] GEC MARCONI LTD,HIRST RES CTR,BOREHAMWOOD WD6 1RX,HERTS,ENGLAND

来源：

APPLIED PHYSICS LETTERS | 1994年 / 64卷 / 03期

关键词：

D O I：

10.1063/1.111147

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Measurements of Shubnikov de Haas oscillations in the temperature range 0.3-2 K have been used to determine an effective mass of 0.23 m0 in a Si/Si0.87Ge0.13/Si two-dimensional hole gas. This value is in agreement with theoretical predictions and with that obtained from cyclotron resonance measurements. The ratio of the transport time to the quantum lifetime is found to be 0.8. It is concluded that the 4 K hole mobility of 11 000 cm2 V-1 s-1 at a carrier sheet density of 2.2 x 10(11) cm-2 is limited by interface roughness and short-range interface charge scattering.

引用

页码：357 / 359

页数：3

共 21 条

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