STRUCTURE OF HIGH-INDEX CLEAN SI SURFACE STUDIED BY REM (HHM) SURFACE WITH M/H=1.4 TO 1.5

被引：9

作者：

SUZUKI, T

YAGI, K

机构：

[1] Physics Department, Tokyo Institute of Technology

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1994年 / 146卷 / 01期

关键词：

D O I：

10.1002/pssa.2211460120

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A flat Si surface with indices hhm (m/h = 1.4 to 1.5) is found by in-situ REM study of the [110] zone. The surface is found on an inner cylindrical surface formed in a (11BAR0) wafer and misoriented from a (111) surface by about 10.5-degrees toward the [11BAR2] direction. RHEED patterns show that the surface structure has a superperiod of seven parallel to the [11BAR0] direction and a long period perpendicular to it. REM images show fringes parallel to the [11BAR0] direction with spacing about 5 to 10 nm. The spacing changes from place to place, which indicates that the surface is a modulated structure. Finely spaced spots in RHEED patterns disappear at about 900-degrees-C suggesting a structural phase transition.

引用

页码：243 / 249

页数：7

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