HIGH-TEMPERATURE SCANNING-TUNNELING-MICROSCOPY OBSERVATION OF PHASE-TRANSITIONS AND RECONSTRUCTION ON A VICINAL SI(111) SURFACE

被引：68

作者：

HIBINO, H

FUKUDA, T

SUZUKI, M

HOMMA, Y

SATO, T

IWATSUKI, M

MIKI, K

TOKUMOTO, H

机构：

[1] NIPPON TELEGRAPH & TEL PUBL CORP, INTERDISCIPLINARY RES LABS, MUSASHINO, TOKYO 180, JAPAN

[2] JOEL LTD, AKISHIMA, TOKYO 196, JAPAN

[3] ELECTROTECH LAB, TSUKUBA, IBARAKI 305, JAPAN

来源：

PHYSICAL REVIEW B | 1993年 / 47卷 / 19期

关键词：

D O I：

10.1103/PhysRevB.47.13027

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The step structure of a vicinal Si(111) surface misoriented 10-degrees to [112BAR] is studied using high-temperature scanning tunneling microscopy (STM). Phase transitions on the vicinal Si(111) surface are observed in real time on an atomic scale. During cooling from above the (1 X 1)-to-(7 X 7) transition temperature, slender (111) facets with a 7 X 7 structure appear, and these facets widen as the temperature decreases. At the initial stage of step bunching, no surface reconstruction is observed on the step bunch. Below 700-degrees-C, however, nucleation of reconstructed (331) facets starts on the step bunch. These STM results are compared with our previous reflection high-energy electron-diffraction results

引用

页码：13027 / 13030

页数：4

共 21 条

[1] MOLECULAR-BEAM EPITAXY GROWTH OF TILTED GAAS ALAS SUPERLATTICES BY DEPOSITION OF FRACTIONAL MONOLAYERS ON VICINAL (001) SUBSTRATES
GAINES, JM
PETROFF, PM
KROEMER, H
SIMES, RJ
GEELS, RS
ENGLISH, JH
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1988, 6 (04): : 1378 - 1381
[2] HIBINO H, 1991, JPN J APPL PHYS, V30, P1377
[3] DC-RESISTIVE-HEATING-INDUCED STEP BUNCHING ON VICINAL SI (111)
HOMMA, Y
MCCLELLAND, RJ
HIBINO, H
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1990, 29 (12): : L2254 - L2256
[4] IWATSUKI M, 1990, JEOL NEWS E, V28, P24
[5] STEP STRUCTURE AND SURFACE RECONSTRUCTION ON VICINAL GE(111) SURFACES
JUNG, TM
PHANEUF, RJ
WILLIAMS, ED
[J]. SURFACE SCIENCE, 1991, 254 (1-3) : 235 - 250
[6] OBSERVATION OF SURFACE RECONSTRUCTION ON SILICON ABOVE 800-DEGREES-C USING THE STM
KITAMURA, S
SATO, T
IWATSUKI, M
[J]. NATURE, 1991, 351 (6323) : 215 - 217
[7] KOHLER U, 1989, J VAC SCI TECHNOL A, V7, P2860, DOI 10.1116/1.576159
[8] REAL-TIME OBSERVATION OF THE SI(111) - (7 X 7)-(1 X-1) PHASE-TRANSITION BY SCANNING TUNNELING MICROSCOPY
MIKI, K
MORITA, Y
TOKUMOTO, H
SATO, T
IWATSUKI, M
SUZUKI, M
FUKUDA, T
[J]. ULTRAMICROSCOPY, 1992, 42 : 851 - 857
[9] RHEED INTENSITY ROCKING CURVES FROM SI(111) SURFACE DURING MBE GROWTH
NAKAHARA, H
ICHIMIYA, A
[J]. JOURNAL OF CRYSTAL GROWTH, 1989, 95 (1-4) : 472 - 475
[10] REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION OSCILLATIONS FROM VICINAL SURFACES - A NEW APPROACH TO SURFACE-DIFFUSION MEASUREMENTS
NEAVE, JH
DOBSON, PJ
JOYCE, BA
ZHANG, J
[J]. APPLIED PHYSICS LETTERS, 1985, 47 (02) : 100 - 102

← 1 2 3 →