GROWTH OF HIGH-QUALITY GE FILMS ON SI(111) USING SB AS SURFACTANT

被引：25

作者：

LARSSON, MI

NI, WX

JOELSSON, K

HANSSON, GV

机构：

[1] Department of Physics and Measurement Technology, Linköping University

来源：

APPLIED PHYSICS LETTERS | 1994年 / 65卷 / 11期

关键词：

D O I：

10.1063/1.112067

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

High quality, completely relaxed Ge films have been grown on Si(111) using Sb as surfactant at the initial stage of growth. After desorbing the surface Sb layer, cusplike reflection high-energy electron diffraction intensity oscillations indicated excellent Ge layer-by-layer epitaxy. High resolution x-ray diffraction analysis showed a very high crystalline quality and well resolved thickness fringes consistent with a flat relaxed Ge layer. Chemical preferential etching experiments revealed a defect density of down to approximately 3 X 10(4) cm-2.

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页码：1409 / 1411

页数：3

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