COMPARISON OF CARRIER LIFETIME MEASUREMENTS BY PHOTOCONDUCTIVE DECAY AND SURFACE PHOTO-VOLTAGE METHODS

被引:11
作者
CHU, TL
STOKES, ED
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10.1063/1.325149
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O59 [应用物理学];
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页码:2996 / 2997
页数:2
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共 8 条
[1]   MINORITY-CARRIER DIFFUSION LENGTHS IN SILICON SLICES AND SHALLOW JUNCTION DEVICES [J].
CHU, TL ;
STOKES, ED .
JOURNAL OF ELECTRONIC MATERIALS, 1978, 7 (01) :173-182
[2]  
KREER JG, 1961, P IRE, V49, P1293
[3]   DETERMINATION OF MINORITY-CARRIER DIFFUSION LENGTH IN INDIUM-PHOSPHIDE BY SURFACE PHOTOVOLTAGE MEASUREMENT [J].
LI, SS .
APPLIED PHYSICS LETTERS, 1976, 29 (02) :126-127
[5]  
RUNYAN WR, 1967, SMU8313 SO METH U RE
[6]   DIFFUSION LENGTHS IN SOLAR-CELLS FROM SHORT-CIRCUIT CURRENT MEASUREMENTS [J].
STOKES, ED ;
CHU, TL .
APPLIED PHYSICS LETTERS, 1977, 30 (08) :425-426
[7]   SURFACE PHOTOVOLTAGE METHOD EXTENDED TO SILICON SOLAR CELL JUNCTION [J].
WANG, EY ;
BARAONA, CR ;
BRANDHOR.HW .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1974, 121 (07) :973-975
[8]  
1976, ANNUAL BOOK ASTM STA, P176