SURFACE-STRUCTURE OF SELENIUM-TREATED GAAS (001) STUDIED BY FIELD-ION SCANNING TUNNELING MICROSCOPY

被引：12

作者：

SHIGEKAWA, H

HASHIZUME, T

OIGAWA, H

MOTAI, K

MERA, Y

NANNICHI, Y

SAKURAI, T

机构：

[1] TOHOKU UNIV,INST MAT RES,AOBA KU,SENDAI,MIYAGI 980,JAPAN

[2] UNIV TOKYO,DEPT APPL PHYS,BUNKYO KU,TOKYO 113,JAPAN

来源：

APPLIED PHYSICS LETTERS | 1991年 / 59卷 / 23期

关键词：

D O I：

10.1063/1.106401

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

For a selenium-treated GaAs (001) surface followed by heat treatment at approximately 530-degrees-C, we have observed using field ion scanning tunneling microscopy ordered arrays with regular intervals of 4 X periodicity in the [110BAR] direction (1.6 nm) to line up in the [110] direction. These ordered arrays are in good agreement with the 4 X 1 structure previously observed by other methods. In a closer view, the 4 X structure was found to be formed by closely placed double rows.

引用

页码：2986 / 2988

页数：3

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