SYNTHESIS OF BULK GAP FROM GA SOLUTIONS

被引：2

作者：

PLASKETT, TS

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1969年 / 116卷 / 12期

关键词：

D O I：

10.1149/1.2411683

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

The synthesis of solid ingots of high-purity GaP by reacting phosphine with molten Ga at 1000 to 1200 C is described. Actual growth parameters were measured during synthesis and compared with the values predicted from solution growth theory. Growth rates of about 1. 7/10//5 cm/sec were possible with this system for a solution saturated with P at 12pp C. Some properties of the synthesized material are presented.

引用

页码：1722 / &

共 12 条

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