GERMANIUM EPITAXIAL-GROWTH IN CLOSED AMPOULES .1. EXPERIMENTAL RESULTS 1D MODELING

被引：6

作者：

LAUNAY, JC ^{[1
]}

DEBEGNAC, H ^{[1
]}

ZAPPOLI, B ^{[1
]}

MIGNON, C ^{[1
]}

机构：

[1] CTR NATL ETUD SPATIALES,F-31055 TOULOUSE,FRANCE

来源：

JOURNAL OF CRYSTAL GROWTH | 1988年 / 92卷 / 1-2期

关键词：

D O I：

10.1016/0022-0248(88)90465-4

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：323 / 331

页数：9

共 11 条

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[5]

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[6] VAPOR TRANSPORT AND EPITAXIAL-GROWTH OF GE IN A GE GEI4 CLOSED SYSTEM BY THE FORCED FLUX METHOD [J].

LAUNAY, JC ;

SALDUCCI, C ;

CADORET, R .

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[7] CONTROL OF CRYSTAL-GROWTH FROM THE VAPOR-PHASE IN A SEALED AMPOULE [J].

OMALY, J ;

ROBERT, M ;

CADORET, R .

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[8]

ROBERT M, 1981, THESIS CLERMONTFERRA

[9]

SALDUCCIBOURDA C, 1986, THESIS BORDEAUX 1

[10] INTERACTION BETWEEN CONVECTION AND SURFACE-REACTIONS IN PHYSICAL VAPOR TRANSPORT IN RECTANGULAR, HORIZONTAL ENCLOSURES [J].

ZAPPOLI, B .

JOURNAL OF CRYSTAL GROWTH, 1986, 76 (02) :449-461

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