AUGER RECOMBINATION IN HEAVILY DOPED P-TYPE GAAS

被引：31

作者：

ZSCHAUER, KH

机构：

[1] Forschungslaboratorium der Siemens AG, München

来源：

SOLID STATE COMMUNICATIONS | 1969年 / 7卷 / 23期

关键词：

D O I：

10.1016/0038-1098(69)90137-9

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The theory of Beattie and Landsberg is applied to Auger transitions in degenerate p-type GaAs. It is found that within the limitations of the approximations used the radiative recombination in p-type GaAs is inevitably dominated by nonradiative Auger recombination processes at carrier concentrations beyond approximately 6 × 1019 cm-3. The dominant Auger process involves hole transition into the split-off valence band. © 1969.

引用

页码：1709 / &

共 13 条

[1]

Beattie A.R., 1958, P R SOC LOND, V249, P16

[2] RECOMBINATION IN SEMICONDUCTORS BY A LIGHT HOLE AUGER TRANSITION [J].