ELECTROREFLECTANCE AND SPIN-ORBIT SPLITTING IN 3-V SEMICONDUCTORS

[1] REFLECTIVITY AND BAND STRUCTURE OF GAAS GAP AND GA(AS P) ALLOYS [J]. PHYSICAL REVIEW LETTERS, 1965, 15 (16) : 662 - +

[2] BAND-THEORETIC MODEL FOR PHOTOELECTRIC EFFECT IN SILICON [J]. PHYSICAL REVIEW, 1965, 139 (2A): : A489 - &

[3] CARDONA M, 1964, 1964 INT C PHYS SEM, P181

[4] CARDONA M, TO BE PUBLISHED

[5] POLARIZATION DEPENDENCE OF PIEZOREFLECTANCE IN SI AND GE [J]. PHYSICAL REVIEW LETTERS, 1965, 15 (09) : 401 - &

[6] DEPENDENCE OF OPTICAL CONSTANTS OF SILICON ON UNIAXIAL STRESS [J]. PHYSICAL REVIEW LETTERS, 1965, 15 (04) : 142 - &

[7] POLLAK FH, TO BE PUBLISHED

[8] FRANZ-KELDYSH EFFECT ABOVE FUNDAMENTAL EDGE IN GERMAINIUM [J]. PHYSICAL REVIEW LETTERS, 1965, 14 (05) : 138 - &

[9] ELECTROREFLECTANCE AT A SEMICONDUCTOR-ELECTROLYTE INTERFACE [J]. PHYSICAL REVIEW LETTERS, 1965, 15 (23) : 883 - &

[10] REFLECTIVITY OF GAAS1-XPX ALLOYS [J]. PHYSICAL REVIEW LETTERS, 1965, 15 (16) : 670 - +

[1] REFLECTIVITY AND BAND STRUCTURE OF GAAS GAP AND GA(AS P) ALLOYS [J]. PHYSICAL REVIEW LETTERS, 1965, 15 (16) : 662 - +

[2] BAND-THEORETIC MODEL FOR PHOTOELECTRIC EFFECT IN SILICON [J]. PHYSICAL REVIEW, 1965, 139 (2A): : A489 - &

[3] CARDONA M, 1964, 1964 INT C PHYS SEM, P181

[4] CARDONA M, TO BE PUBLISHED

[5] POLARIZATION DEPENDENCE OF PIEZOREFLECTANCE IN SI AND GE [J]. PHYSICAL REVIEW LETTERS, 1965, 15 (09) : 401 - &

[6] DEPENDENCE OF OPTICAL CONSTANTS OF SILICON ON UNIAXIAL STRESS [J]. PHYSICAL REVIEW LETTERS, 1965, 15 (04) : 142 - &

[7] POLLAK FH, TO BE PUBLISHED

[8] FRANZ-KELDYSH EFFECT ABOVE FUNDAMENTAL EDGE IN GERMAINIUM [J]. PHYSICAL REVIEW LETTERS, 1965, 14 (05) : 138 - &

[9] ELECTROREFLECTANCE AT A SEMICONDUCTOR-ELECTROLYTE INTERFACE [J]. PHYSICAL REVIEW LETTERS, 1965, 15 (23) : 883 - &

[10] REFLECTIVITY OF GAAS1-XPX ALLOYS [J]. PHYSICAL REVIEW LETTERS, 1965, 15 (16) : 670 - +