N-CHANNEL ACCUMULATION LAYER MOSFET OPERATING AT 4-K

被引：5

作者：

GHOSH, RN

SILSBEE, RH

机构：

[1] Laboratory of Atomic and Solid State Physics, Cornell University, Ithaca

来源：

CRYOGENICS | 1990年 / 30卷 / 12期

基金：

美国国家科学基金会;

关键词：

LOW TEMPERATURE ELECTRONICS; TRANSISTORS; HYSTERESIS;

D O I：

10.1016/0011-2275(90)90209-U

中图分类号：

O414.1 [热力学];

学科分类号：

摘要：

An accumulation layer n-channel MOSFET that operates at 4 K has been fabricated. Sharp hysteretic current kinks in the I - V characteristic are observed, where the transistor switches discontinuously between two well defined states. The kinks are modelled in terms of changes in the device potential configuration due to holes generated by avalanche breakdown in the high electric field region pinch off. Noise measurements which elucidate the physical mechanisms causing the current kinks are presented.

引用

页码：1069 / 1073

页数：5

共 9 条

[1] MODEL FOR HYSTERESIS AND KINK BEHAVIOR OF MOS-TRANSISTORS OPERATING AT 4.2-K [J].