LASER SCANNING TECHNIQUE FOR THE DETECTION OF RESISTIVITY INHOMOGENEITIES IN SILICON USING LIQUID RECTIFYING CONTACTS

被引：6

作者：

DRUGGE, B ^{[1
]}

NORDLANDER, E ^{[1
]}

机构：

[1] UNIV UPPSALA,INST TECHNOL,DEPT ELECTR,S-75105 UPPSALA,SWEDEN

来源：

关键词：

D O I：

10.1109/T-ED.1980.20159

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：2124 / 2127

页数：4

共 10 条

[1] Cardona M., 1969, MODULATION SPECTROSC
[2] DRUGGE B, UNPUBLISHED
[3] LASER SCANNING TECHNIQUE FOR THE DETECTION OF RESISTIVITY AND LIFETIME INHOMOGENEITIES IN SEMICONDUCTOR-DEVICES
ENGSTROM, O
DRUGGE, B
TOVE, PA
[J]. PHYSICA SCRIPTA, 1978, 18 (06): : 357 - 363
[4] ENGSTROM O, 1980, LIFETIME FACTORS SIL, P239
[5] FRANKL DR, 1969, ELECTRICAL PROPERTIE
[6] SEMICONDUCTOR PROFILING USING AN OPTICAL PROBE
LILE, DL
DAVIS, NM
[J]. SOLID-STATE ELECTRONICS, 1975, 18 (7-8) : 699 - &
[7] MCMAHON RE, 1971, ELECTRONICS, V12, P92
[8] MYAMLIN VA, 1967, ELECTRO CHEM SEMICON
[9] SIMPLE LIGHT SPOT SCANNER AND ITS APPLICATION ON SEMICONDUCTOR NUCLEAR PARTICLE DETECTORS
SCHULER, W
[J]. REVIEW OF SCIENTIFIC INSTRUMENTS, 1967, 38 (10) : 1374 - +
[10] TOVE PA, 1975, UPTEC7561R UPPS U I