SURFACE CHARACTERISTICS OF SYNTHESIZED DIAMOND AND THE EFFECT OF SURFACE-TREATMENT ON SURFACE TRANSFORMATIONS

被引：7

作者：

MORI, Y

EIMORI, N

MA, JS

ITO, T

HIRAKI, A

机构：

[1] Department of Electrical Engineering, Faculty of Engineering, Osaka University, Suita, Osaka, 565

来源：

APPLIED SURFACE SCIENCE | 1992年 / 56-8卷

关键词：

D O I：

10.1016/0169-4332(92)90220-R

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The surface characteristics of diamond films synthesized by chemical vapour deposition (CVD) have been investigated mainly by electron energy loss spectroscopy. No surface states in the band gap have been observed for the as-grown CVD diamond surface. A feature does, however, appear in the band gap region of the energy loss spectra after a high vacuum (approximately 10(-9) Torr) anneal at approximately 900-degrees-C. On the other hand, graphitization of the as-grown diamond surface is found to be induced when annealed approximately 900-degrees-C at 10(-7) Torr. It is also found that the graphitization can be restrained at temperatures below approximately 900-degrees-C anneal at 10(-7) Torr by a complex of oxygen and chromium atoms chemisorbed onto the diamond surface after the CrO3 treatment. The possible origin of these phenomena is discussed.

引用

页码：89 / 93

页数：5

共 17 条

[1] USE OF THIN SI CRYSTALS IN BACKSCATTERING-CHANNELING STUDIES OF SI-SIO2 INTERFACE [J].