COMPACT ECR-SOURCE OF IONS AND RADICALS FOR SEMICONDUCTOR SURFACE-TREATMENT

被引:12
作者
SHAPOVAL, SY
BULKIN, PV
CHUMAKOV, AA
KHUDOBIN, SA
MAXIMOV, I
MIKHAILOV, GM
机构
[1] Institute of Microelectronics Technology and High Purity Materials, USSR Academy of Sciences, Chernogolovka
关键词
D O I
10.1016/0042-207X(92)90260-4
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
A compact microwave ECR-source of ions and free radicals has been fabricated. It includes a stainless steel tube, ceramic microwave input and permanent SmCo5 ring-shaped magnets. Its working pressure range is 10(-4)-10(-2) torr using Ar, H-2, N2 and some other gases. The maximum ion current density in a hydrogen discharge at 10(-3) torr reaches 3 mA cm-2 15 cm downstream with a microwave power and plasma stream diameter of 100 W and 8 cm, respectively.
引用
收藏
页码:195 / 197
页数:3
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