DIAGNOSTICS AND MODELING OF SILANE AND METHANE PLASMA CVD PROCESSES

The deposition of hydrogenated amorphous silicon and diamond can be achieved using plasma‐enhanced chemical vapor deposition. In order to optimize the deposition process and thus the property profiles of the materials obtained it is important that the gas‐phase and surface reactions are understood. The modeling methods and the diagnostic techniques used to follow the processes involved are reviewed and the plasma chemistry of diamond and amorphous silicon deposition compared. Copyright © 1992 Verlag GmbH & Co. KGaA, Weinheim