THEORETICAL-STUDY OF LEAKAGE CURRENT EFFECT ON SURFACE PHOTOVOLTAGE INDUCED BY PHOTOEMISSION

被引：8

作者：

CHEN, TP

BELING, CD

FUNG, S

机构：

[1] Department of Physics, University of Hong Kong

来源：

SOLID STATE COMMUNICATIONS | 1992年 / 84卷 / 08期

关键词：

D O I：

10.1016/0038-1098(92)90096-R

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Recent studies show that surface photovoltage (SPV) seriously affects the determination of the surface band bending by photoelectron spectroscopy. This work demonstrates that SPV is strongly affected by the leakage current which depends on the metal coverage and other experimental factors. The results of our calculation account for the observed reduction of SPV with increasing coverage and the strong photo-flux dependence of SPV. This study suggests the importance of the leakage current effect on SPV in the determination of the coverage-dependent surface band bending from photoemission experiments.

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页码：815 / 818

页数：4

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