THERMALLY ACCELERATED AGING OF SEMICONDUCTOR COMPONENTS

被引：37

作者：

REYNOLDS, FH ^{[1
]}

机构：

[1] PO TELECOMMUN HEADQUARTERS,RES DEPT,LONDON NW2 7DT,ENGLAND

来源：

关键词：

D O I：

10.1109/PROC.1974.9409

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：212 / 222

页数：11

共 10 条

[1]

[Anonymous], 1968, PROBABILISTIC RELIAB

[2]

Bazovsky Igor, 1961, RELIABILITY THEORY P

[3]

CORKE RL, 1968, POST OFFICE ELEC ENG, V61, P7

[4]

FINNEY DJ, 1952, PROBIT ANALYSIS

[5]

PECK DS, 1961, SEMICONDUCTOR RELIAB

[6]

PECK DS, 1971, 9TH ANN P REL PHYS S, P69

REYNOLDS, FH ;

PARROTT, RW ;

BRAITHWA.D .

PROCEEDINGS OF THE INSTITUTION OF ELECTRICAL ENGINEERS-LONDON, 1971, 118 (3-4) :475-+

REYNOLDS, FH .

PROCEEDINGS OF THE INSTITUTION OF ELECTRICAL ENGINEERS-LONDON, 1972, 119 (12) :1683-1686

[9]

REYNOLDS FH, 1971, 9TH ANN P REL PHYS S, P46

[10]

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