SIMPLE MATHEMATICAL-MODEL OF SHIFT OF THRESHOLD VOLTAGE INDUCED IN AN MOS-TRANSISTOR BY TESTING AT ELEVATED-TEMPERATURES

被引：6

作者：

REYNOLDS, FH ^{[1
]}

机构：

[1] PO RES DEPT,LONDON NW2 7DT,ENGLAND

来源：

PROCEEDINGS OF THE INSTITUTION OF ELECTRICAL ENGINEERS-LONDON | 1972年 / 119卷 / 12期

关键词：

MOS TRANSISTORS;

D O I：

10.1049/piee.1972.0335

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Tests of a simple M. O. S. integrated circuit at elevated temperatures have previously exposed substantial negative shifts of threshold voltage in those transistors operated at a negative gate voltage. Some of the results presented to an earlier paper are now reprocessed to yield a simple mathematical model of the shift observed on one of the transistors. The model provides an improved basis for the prediction of long-term trends under the sstresses of normal service life.

引用

页码：1683 / 1686

页数：4

共 6 条

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[5]

REYNOLDS FH, 1971, 9TH ANN P REL PHYS S, P46

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