BAND-STRUCTURE OF CARBONATED AMORPHOUS-SILICON STUDIED BY OPTICAL, PHOTOELECTRON, AND X-RAY SPECTROSCOPY

被引：154

作者：

SOLOMON, I ^{[1
]}

SCHMIDT, MP ^{[1
]}

SENEMAUD, C ^{[1
]}

KHODJA, MD ^{[1
]}

机构：

[1] UNIV PIERRE & MARIE CURIE,CHIM PHYS LAB,F-75231 PARIS 05,FRANCE

来源：

PHYSICAL REVIEW B | 1988年 / 38卷 / 18期

关键词：

D O I：

10.1103/PhysRevB.38.13263

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：13263 / 13270

页数：8

共 25 条

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