PICOSECOND RECOMBINATION PROCESSES IN LEAD SELENIDE

被引：8

作者：

KLANN, R ^{[1
]}

HOFER, T ^{[1
]}

BUHLEIER, R ^{[1
]}

ELSAESSER, T ^{[1
]}

LAMBRECHT, A ^{[1
]}

机构：

[1] FRAUNHOFER INST PHYS MESSTECH,W-7800 FREIBURG,GERMANY

来源：

APPLIED PHYSICS LETTERS | 1992年 / 61卷 / 24期

关键词：

D O I：

10.1063/1.108059

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Picosecond recombination processes of photoexcited electron-hole plasma in PbSe are directly monitored by time-resolved pump-probe experiments in the wavelength range from 3 to 9 mum. At temperatures T less-than-or-equal-to 70 K, a rapid decrease of carrier density within 100 ps is found for excitation densities higher than 7 X 10(17) CM-3. This behavior is due to recombination by stimulated emission, as is evident from comparative measurements of midinfrared luminescence spectra. At T = 300 K, Auger recombination on a time scale of 2 ns is observed below the threshold of stimulated emission. The data for a carrier density of 3 X 10(18) CM-3 give an Auger coefficient of C congruent-to 10(-28) cm6/s.

引用

页码：2866 / 2868

页数：3

共 14 条

[1] NUMERICAL TABULATION OF INTEGRALS OF FERMI FUNCTIONS USING K-]P-] DENSITY OF STATES [J].