INTRINSIC RECOMBINATION IN DEPENDENCE ON DOPING CONCENTRATION AND EXCITATION-LEVEL - APPLICATION TO LEAD CHALCOGENIDES

被引：28

作者：

MOCKER, M

ZIEP, O

机构：

来源：

PHYSICA STATUS SOLIDI B-BASIC RESEARCH | 1983年 / 115卷 / 02期

关键词：

D O I：

10.1002/pssb.2221150211

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：415 / 425

页数：11

共 17 条

[1]

ADOMAITIS V, 1980, S POLUPR MALOI SHIRI, P109

[2] AUGER EFFECT IN SEMICONDUCTORS [J].

BEATTIE, AR ;

LANDSBERG, PT .

PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1959, 249 (1256) :16-29

[3] AUGER RECOMBINATION AND JUNCTION RESISTANCE IN LEAD-TIN TELLURIDE [J].

EMTAGE, PR .

JOURNAL OF APPLIED PHYSICS, 1976, 47 (06) :2565-2568

[4]

GENZOW D, 1981, 4 P INT C NARR GAP S

[5] CARRIER DENSITY DEPENDENCE OF AUGER RECOMBINATION [J].

HAUG, A .

SOLID-STATE ELECTRONICS, 1978, 21 (11-1) :1281-1284

[6] A NEW ATTEMPT FOR UNDERSTANDING TEMPERATURE-DEPENDENT THRESHOLDS IN LEAD SALT INJECTION-LASERS [J].

HOAI, TX ;

HERRMANN, KH ;

GENZOW, D .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1981, 64 (01) :239-248

[7]

PREIER H, 1979, APPL PHYS, V20, P198

[8] LIFETIME CALCULATIONS FOR AUGER RECOMBINATION IN LEAD TIN TELLURIDE [J].

ROSMAN, R ;

KATZIR, A .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1982, 18 (05) :814-817

[9] LIFE TIME MEASUREMENTS IN PBTE AND PBSNTE [J].

SCHLICHT, B ;

DORNHAUS, R ;

NIMTZ, G ;

HAAS, LD ;

JAKOBUS, T .

SOLID-STATE ELECTRONICS, 1978, 21 (11-1) :1481-1485

[10] RECOMBINATION OF PHOTOCARRIERS IN LEAD-TIN TELLURIDE [J].

WEISER, K ;

RIBAK, E ;

KLEIN, A ;

AINHORN, M .

INFRARED PHYSICS, 1981, 21 (03) :149-154

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