LIFETIME CALCULATIONS FOR AUGER RECOMBINATION IN LEAD TIN TELLURIDE

被引：24

作者：

ROSMAN, R

KATZIR, A

机构：

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1982年 / 18卷 / 05期

关键词：

D O I：

10.1109/JQE.1982.1071619

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：814 / 817

页数：4

共 9 条

[1] GAIN-FREQUENCY-CURRENT RELATION FOR PB1-X SNX TE DOUBLE HETEROSTRUCTURE LASERS [J].

ANDERSON, WW .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1977, 13 (07) :532-543

[2]

APPOLD G, 1978, 14TH P INT C PHYS SE

[3] AUGER RECOMBINATION AND JUNCTION RESISTANCE IN LEAD-TIN TELLURIDE [J].

EMTAGE, PR .

JOURNAL OF APPLIED PHYSICS, 1976, 47 (06) :2565-2568

[4] CARRIER DENSITY DEPENDENCE OF AUGER RECOMBINATION [J].

HAUG, A .

SOLID-STATE ELECTRONICS, 1978, 21 (11-1) :1281-1284

[5]

HOLLOWAY H, 1980, PHYS THIN FILMS, V11, P105

[6]

Kane E. O., 1980, Narrow Gap Semiconductors, Physics and Applications. Proceedings of the International Summer School on Narrow Gap Semiconductors, Physics and Applications, P13

[7]

OPYD WG, 1973, AD767667

[8] RECENT ADVANCES IN LEAD-CHALCOGENIDE DIODE-LASERS [J].

PREIER, H .

APPLIED PHYSICS, 1979, 20 (03) :189-206

[9] NONRADIATIVE AND RADIATIVE RECOMBINATION IN LEAD CHALCOGENIDES [J].

ZIEP, O ;

GENZOW, D ;

MOCKER, M ;

HERRMANN, KH .

PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1980, 99 (01) :129-138

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