INFLUENCE OF GE CONTENT ON VIBRATIONAL AND OPTICAL-PROPERTIES OF ALPHA-SI1-XGEXH THIN-FILMS

被引：7

作者：

DIMOVAMALINOVSKA, D

NEDIALKOVA, L

机构：

[1] Central Laboratory on Solar Energy and New Energy Sources, Bulgarian Academy of Sciences, 1784 Sofia, blv. Tzarigradsko chaussee

来源：

SOLAR ENERGY MATERIALS AND SOLAR CELLS | 1993年 / 31卷 / 02期

关键词：

D O I：

10.1016/0927-0248(93)90059-C

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

The effect of Ge on the optical gap and network short-range order in alpha-Si1-xGex:H alloys has been obtained by optical-absorption and Raman-scattering measurements. A comparison of the correlation between Raman Si-Si transverse optical (TO) peak width and the optical gap for films with different Ge concentration (0.16 < x < 0.4) allows a separation of the roles of Ge-induced bond angle disordering and alloy energy band changes.

引用

页码：283 / 289

页数：7

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