DETERMINATION OF CONCENTRATIONS AND IONIZATION ENERGIES OF IMPERFECTIONS IN DEGENERATE INSB FILMS

A model is presented for analyzing the results of temperature dependent carrier concentration measurements in degenerate n-type InSb in order to determine the concentration and ionization energies of both shallow and deep trap states. Experimental data on evaporated InSb films as well as from our own sputter- deposited InSb films were fitted very well with the present model. In both cases the results indicated two deep trap levels at energies of 0.025 and 0.085 eV below the conduction band as well as a net concentration of shallow donors with ionization energies less than 0.001 eV. The concentrations of these levels varied with film growth conditions. © 1979.