REVERSE I-V CHARACTERISTICS OF NA-SI SCHOTTKY BARRIER

被引:7
作者
SZYDLO, N
POIRIER, R
KLEEFSTRA, M
机构
关键词
D O I
10.1063/1.1653275
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:477 / +
页数:1
相关论文
共 6 条
[1]  
ARCHER RJ, 1963, ANN NY ACAD SCI, V101, P697
[2]   SURFACE STATES AND RECTIFICATION AT A METAL SEMI-CONDUCTOR CONTACT [J].
BARDEEN, J .
PHYSICAL REVIEW, 1947, 71 (10) :717-727
[3]   SURFACE STATES AND BARRIER HEIGHT OF METAL-SEMICONDUCTOR SYSTEMS [J].
COWLEY, AM ;
SZE, SM .
JOURNAL OF APPLIED PHYSICS, 1965, 36 (10) :3212-&
[4]   SURFACE-STATE AND INTERFACE EFFECTS IN SCHOTTKY BARRIERS AT N-TYPE SILICON SURFACES [J].
CROWELL, CR ;
SHORE, HB ;
LABATE, EE .
JOURNAL OF APPLIED PHYSICS, 1965, 36 (12) :3843-&
[5]   SURFACE MEASUREMENTS ON FRESHLY CLEAVED SILICON PARA-NORMAL JUNCTIONS [J].
GOBELI, GW ;
ALLEN, FG .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1960, 14 :23-&
[6]  
Lepselter M. P., 1969, Ohmic contacts to semiconductors, P159