ROLE OF SHALLOW IMPURITIES AND LATTICE-DEFECTS IN NUCLEATION OF ELECTRON-HOLE DROPLETS IN SI

被引：12

作者：

NAKASHIMA, H

SHIRAKI, Y

机构：

来源：

SOLID STATE COMMUNICATIONS | 1981年 / 40卷 / 02期

关键词：

D O I：

10.1016/0038-1098(81)90166-6

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：195 / 197

页数：3

共 19 条

[1]

[Anonymous], [No title captured]

[2] SIMULTANEOUS KINETICS OF DROPS AND EXCITONS IN SILICON DURING DROP FORMATION [J].

COLLET, J ;

BARRAU, J ;

BROUSSEAU, M ;

MAAREF, H .

PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1977, 80 (02) :461-470

[3] HYSTERESIS EFFECT AND SURFACE-ENERGY OF DROPS IN SILICON [J].

COLLET, J ;

PUGNET, M ;

BARRAU, J ;

BROUSSEAU, M ;

MAAREF, H .

SOLID STATE COMMUNICATIONS, 1977, 24 (04) :335-338

[4] INVESTIGATIONS OF CONDENSATION PHENOMENA OF ELECTRON-HOLE DROPS IN PURE GE [J].

ETIENNE, B ;

BENOITALAGUILLAUME, C ;

VOOS, M .

PHYSICAL REVIEW B, 1976, 14 (02) :712-718

[5] INTERACTION OF ELECTRON-HOLE DROPLETS IN GE WITH DISLOCATIONS [J].

GREENSTEIN, M ;

WOLFE, JP ;

HALLER, EE .

SOLID STATE COMMUNICATIONS, 1980, 35 (12) :1011-1015

[6] ONSETS OF THE ELECTRON-HOLE-DROPLET LUMINESCENCE IN SI [J].

HAMMOND, RB ;

SILVER, RN .

PHYSICAL REVIEW LETTERS, 1979, 42 (08) :523-526

[7] TEMPERATURE-DEPENDENCE OF ELECTRON-HOLE-LIQUID LUMINESCENCE IN SI [J].

HAMMOND, RB ;

MCGILL, TC ;

MAYER, JW .

PHYSICAL REVIEW B, 1976, 13 (08) :3566-3575

[8]

KAMINSKII AS, 1971, SOV PHYS JETP-USSR, V32, P1048

[9] CONDENSATION OF NONEQUILIBRIUM CHARGE-CARRIERS IN SEMICONDUCTORS [J].

POKROVSKII, Y .

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1972, 11 (02) :385-+

[10] NUCLEATION OF ELECTRON-HOLE-DROPS IN SI [J].

SHAH, J ;

DAYEM, AH ;

COMBESCOT, M .

SOLID STATE COMMUNICATIONS, 1977, 24 (01) :71-74

← 1 2 →