THE INFLUENCE OF CRYSTALLOGRAPHIC ORIENTATION ON GALLIUM INCORPORATION IN HGCDTE GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION ON GAAS

The influence of the crystallographic orientation on gallium incorporation in HgCdTe films grown on GaAs substrates was investigated. It was found that growth on the (111)B orientation results in approximately 100 times more gallium incorporation than on the (111) A orientation and the (100) orientation falls in between the other two. The results can be explained in terms of the chemical reactivity of each surface. Chemical reactions between the GaAs back surface and the metalorganic reagents are believed to be the source of gallium doping. © 1990, American Vacuum Society. All rights reserved.