THE ORGANOMETALLIC EPITAXY OF EXTRINSIC P-DOPED HGCDTE

被引:70
作者
TASKAR, NR
BHAT, IB
PARAT, KK
TERRY, D
EHSANI, H
GHANDHI, SK
机构
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1989年 / 7卷 / 02期
关键词
D O I
10.1116/1.576112
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
引用
收藏
页码:281 / 284
页数:4
相关论文
共 21 条
[1]   THE ORGANOMETALLIC HETEROEPITAXY OF CDTE AND HGCDTE ON GAAS SUBSTRATES [J].
BHAT, IB ;
TASKAR, NR ;
GHANDHI, SK .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1986, 4 (04) :2230-2233
[2]   DIFFUSION IN CDHG1-XTE AND RELATED MATERIALS [J].
BROWN, M ;
WILLOUGHBY, AFW .
JOURNAL OF CRYSTAL GROWTH, 1982, 59 (1-2) :27-39
[3]   THE BEHAVIOR OF SELECTED IMPURITIES IN CDXHG1-XTE [J].
CAPPER, P .
JOURNAL OF CRYSTAL GROWTH, 1982, 57 (02) :280-299
[4]   ACCEPTOR DOPING OF BRIDGMAN-GROWN CDXHG1-XTE [J].
CAPPER, P ;
GOSNEY, JJG ;
JONES, CL ;
KENWORTHY, I ;
ROBERTS, JA .
JOURNAL OF CRYSTAL GROWTH, 1985, 71 (01) :57-65
[5]   THE ACTIVATION-ENERGY OF COPPER SHALLOW ACCEPTORS IN MERCURY CADMIUM TELLURIDE [J].
CHEN, MC ;
TREGILGAS, JH .
JOURNAL OF APPLIED PHYSICS, 1987, 61 (02) :787-789
[6]   ELECTRICAL PROPERTIES OF N-TYPE GERMANIUM [J].
DEBYE, PP ;
CONWELL, EM .
PHYSICAL REVIEW, 1954, 93 (04) :693-706
[7]   CARRIER FREEZE-OUT AND ACCEPTOR ENERGIES IN P-TYPE HG1-XCDXTE [J].
ELLIOTT, CT ;
FOYT, AG ;
MELNGAIL.I ;
HARMAN, TC .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1972, 33 (08) :1527-&
[8]   HIGH-QUALITY HG1-XCDXTE EPITAXIAL LAYERS BY THE ORGANOMETALLIC PROCESS [J].
GHANDHI, SK ;
BHAT, I .
APPLIED PHYSICS LETTERS, 1984, 44 (08) :779-781
[9]   ORGANOMETALLIC EPITAXY OF HGCDTE ON CDTESE SUBSTRATES WITH HIGH COMPOSITIONAL UNIFORMITY [J].
GHANDHI, SK ;
BHAT, IB ;
FARDI, H .
APPLIED PHYSICS LETTERS, 1988, 52 (05) :392-394
[10]   METALORGANIC GROWTH OF HIGH-PURITY HGCDTE FILMS [J].
HOKE, WE ;
LEMONIAS, PJ ;
TRACZEWSKI, R .
APPLIED PHYSICS LETTERS, 1984, 45 (10) :1092-1094