THE ORGANOMETALLIC HETEROEPITAXY OF CDTE AND HGCDTE ON GAAS SUBSTRATES

被引：27

作者：

BHAT, IB

TASKAR, NR

GHANDHI, SK

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1986年 / 4卷 / 04期

关键词：

D O I：

10.1116/1.574060

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

收藏

页码：2230 / 2233

页数：4

相关论文

共 18 条

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[2] GROWTH OF (100) CDTE-FILMS OF HIGH STRUCTURAL PERFECTION ON (100) GAAS SUBSTRATES BY MOLECULAR-BEAM EPITAXY
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[6] MOLECULAR-BEAM EPITAXIAL-GROWTH OF HIGH-QUALITY HGTE AND HG1-XCDXTE ONTO GAAS (001) SUBSTRATES
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[7] HIGH-QUALITY HG1-XCDXTE EPITAXIAL LAYERS BY THE ORGANOMETALLIC PROCESS
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[J]. APPLIED PHYSICS LETTERS, 1984, 44 (08) : 779 - 781
[8] GROWTH OF CDTE ON GAAS BY ORGANOMETALLIC VAPOR-PHASE HETEROEPITAXY
GHANDHI, SK
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[9] GROWTH OF CDTE ON INSB BY ORGANOMETALLIC VAPOR-PHASE EPITAXY
GHANDHI, SK
BHAT, I
[J]. APPLIED PHYSICS LETTERS, 1984, 45 (06) : 678 - 680
[10] THE GROWTH OF HIGH-QUALITY CDXHG1-XTE BY MOVPE ONTO GAAS SUBSTRATES
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