THE GROWTH OF HIGH-QUALITY CDXHG1-XTE BY MOVPE ONTO GAAS SUBSTRATES

被引：39

作者：

GIESS, J

GOUGH, JS

IRVINE, SJC

BLACKMORE, GW

MULLIN, JB

ROYLE, A

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1985年 / 72卷 / 1-2期

关键词：

D O I：

10.1016/0022-0248(85)90129-0

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：120 / 125

页数：6

共 17 条

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[9] METALORGANIC VAPOR-DEPOSITION OF CDTE AND HGCDTE EPITAXIAL-FILMS ON INSB AND GAAS SUBSTRATES [J].

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[10] A STUDY OF TRANSPORT AND PYROLYSIS IN THE GROWTH OF CDXHG1-XTE BY MOVPE [J].

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