ACCEPTOR DOPING OF BRIDGMAN-GROWN CDXHG1-XTE

被引：31

作者：

CAPPER, P ^{[1
]}

GOSNEY, JJG ^{[1
]}

JONES, CL ^{[1
]}

KENWORTHY, I ^{[1
]}

ROBERTS, JA ^{[1
]}

机构：

[1] PHILIPS RES LABS,REDHILL RH1 5HA,SURREY,ENGLAND

来源：

JOURNAL OF CRYSTAL GROWTH | 1985年 / 71卷 / 01期

关键词：

D O I：

10.1016/0022-0248(85)90043-0

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：57 / 65

页数：9

共 15 条

[1] FACTORS AFFECTING THE ELECTRICAL CHARACTERISTICS OF CADMIUM MERCURY TELLURIDE CRYSTALS
BARTLETT, BE
CAPPER, P
HARRIS, JE
QUELCH, MJT
[J]. JOURNAL OF CRYSTAL GROWTH, 1980, 49 (04) : 600 - 606
[2] EFFECTS OF GROWTH SPEED ON THE COMPOSITIONAL VARIATIONS IN CRYSTALS OF CADMIUM MERCURY TELLURIDE
BARTLETT, BE
CAPPER, P
HARRIS, JE
QUELCH, MJT
[J]. JOURNAL OF CRYSTAL GROWTH, 1979, 46 (05) : 623 - 629
[3] DIFFUSION IN CDHG1-XTE AND RELATED MATERIALS
BROWN, M
WILLOUGHBY, AFW
[J]. JOURNAL OF CRYSTAL GROWTH, 1982, 59 (1-2) : 27 - 39
[4] GROWTH OF CDXHG1-XTE - COMPARISON OF SOME PROPERTIES WITH THE PREDICTIONS OF 2 MELT GROWTH-MODELS
CAPPER, P
JONES, CL
PEARCE, EJ
QUELCH, MJT
[J]. JOURNAL OF CRYSTAL GROWTH, 1983, 62 (03) : 487 - 497
[5] THE BEHAVIOR OF SELECTED IMPURITIES IN CDXHG1-XTE
CAPPER, P
[J]. JOURNAL OF CRYSTAL GROWTH, 1982, 57 (02) : 280 - 299
[6] A METHOD FOR ROUTINE CHARACTERIZATION OF THE HOLE CONCENTRATION IN P-TYPE CADMIUM MERCURY TELLURIDE
DENNIS, PNJ
ELLIOTT, CT
JONES, CL
[J]. INFRARED PHYSICS, 1982, 22 (03): : 167 - 169
[7] CARRIER FREEZE-OUT AND ACCEPTOR ENERGIES IN P-TYPE HG1-XCDXTE
ELLIOTT, CT
FOYT, AG
MELNGAIL.I
HARMAN, TC
[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1972, 33 (08) : 1527 - &
[8] DIRECT ANALYSIS OF SOLID CADMIUM MERCURY TELLURIDE BY FLAMELESS ATOMIC-ABSORPTION USING INTERACTIVE COMPUTER-PROCESSING
GRAINGER, F
GALE, IG
[J]. JOURNAL OF MATERIALS SCIENCE, 1979, 14 (06) : 1370 - 1374
[9] DOPING PROPERTIES OF SELECTED IMPURITIES IN HG1-XCDXTE
JOHNSON, ES
SCHMIT, JL
[J]. JOURNAL OF ELECTRONIC MATERIALS, 1977, 6 (01) : 25 - 38
[10] JOHNSON ES, 1978, Patent No. 4105477

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