ANALYSIS OF THE KINK EFFECT IN MOS-TRANSISTORS

被引：37

作者：

HAFEZ, IM

GHIBAUDO, G

BALESTRA, F

机构：

[1] Laboratoire de Physique des Composants a Semiconducteurs, 38016 Grenoble, ENSERG

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1990年 / 37卷 / 03期

关键词：

D O I：

10.1109/16.47796

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An analysis of the kink effect in MOS transistors is proposed. This approach provides a comprehensive view of the kink effect in bulk silicon MOSFET's. In particular, it is shown that the excess drain current induced by the kink effect is proportional to the body transconductance of the device operated at room as well as liquid-helium temperatures. © 1990 IEEE

引用

页码：818 / 821

页数：4

共 14 条

[1] INFLUENCE OF SUBSTRATE FREEZE-OUT ON THE CHARACTERISTICS OF MOS-TRANSISTORS AT VERY LOW-TEMPERATURES [J].