TEMPERATURE-DEPENDENCE OF DOPING ELEMENT INCORPORATION WITH THE CHEMICAL VAPOR-DEPOSITION OF EPITAXIAL SILICON .5. INCORPORATION OF ARSENIC

被引：7

作者：

KUHNE, H

SPERLING, R

机构：

来源：

KRISTALL UND TECHNIK-CRYSTAL RESEARCH AND TECHNOLOGY | 1980年 / 15卷 / 04期

关键词：

D O I：

10.1002/crat.19800150405

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：403 / 411

页数：9

共 19 条

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[2]

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[3]

DUCHEMIN JP, 1977, REV TECHNIQUE THOMSO, V9, P411

[4] EFFECT OF COMPLEX-FORMATION ON DIFFUSION OF ARSENIC IN SILICON [J].

FAIR, RB ;

WEBER, GR .

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[5] DIFFUSION OF ION-IMPLANTED ARSENIC IN SILICON [J].

FAIR, RB ;

TSAI, JCC .

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[6]

GILING LJ, 1975, J CRYST GROWTH, V31, P317, DOI 10.1016/0022-0248(75)90147-5

[7]

HONIG RE, 1969, RCA REV, V30, P285

[8] DEPENDENCE OF DOPING ELEMENT INCORPORATION ON TEMPERATURE IN THE CHEMICAL VAPOR-DEPOSITION OF EPITAXIAL SILICON .3. EMPIRICAL INCORPORATION CHARACTERISTIC OF THE SI-P-H SYSTEM [J].

KUHNE, H .

KRISTALL UND TECHNIK-CRYSTAL RESEARCH AND TECHNOLOGY, 1979, 14 (04) :413-420

[9] INCORPORATION CONCENTRATION-DEPENDENCE OF PHOSPHORUS IN THE DEPOSITION OF SILICON EPITAXIAL LAYERS FROM SILANE-PHOSPHINE-HYDROGEN MIXTURES [J].

KUHNE, H .

KRISTALL UND TECHNIK-CRYSTAL RESEARCH AND TECHNOLOGY, 1979, 14 (03) :333-342

[10] TEMPERATURE-DEPENDENCE OF DEGREE OF DOPING IN GROWTH OF SILICON EPITAXIAL LAYERS FROM GAS-PHASE .2. PHOSPHORUS CONTENT AND VALUES OF DIFFERENTIAL MOLAR SOLUTION ENTHALPIES [J].

KUHNE, H .

KRISTALL UND TECHNIK-CRYSTAL RESEARCH AND TECHNOLOGY, 1978, 13 (09) :1059-1066

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