TEMPERATURE-DEPENDENCE OF DEGREE OF DOPING IN GROWTH OF SILICON EPITAXIAL LAYERS FROM GAS-PHASE .2. PHOSPHORUS CONTENT AND VALUES OF DIFFERENTIAL MOLAR SOLUTION ENTHALPIES

被引：6

作者：

KUHNE, H

机构：

来源：

KRISTALL UND TECHNIK-CRYSTAL RESEARCH AND TECHNOLOGY | 1978年 / 13卷 / 09期

关键词：

D O I：

10.1002/crat.19780130907

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：1059 / 1066

页数：8

共 11 条

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[5]

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[6] DESCRIPTION OF DONOR INSERTION USING MODEL WITH RESPECT TO MONO-CRYSTALLINE SILICON SEPARATION FROM GAS-PHASE [J].

KUHNE, H .

KRISTALL UND TECHNIK-CRYSTAL RESEARCH AND TECHNOLOGY, 1978, 13 (07) :841-850

[7] TEMPERATURE-DEPENDENCE OF DEGREE OF DOPING IN GROWTH OF SILICON EPITAXIAL LAYERS FROM GAS-PHASE .1. PHOSPHORUS CONTENT AND NATURE OF SEGREGATION COEFFICIENT [J].

KUHNE, H .

KRISTALL UND TECHNIK-CRYSTAL RESEARCH AND TECHNOLOGY, 1978, 13 (08) :939-946

[8]

KUZNETZOV WP, 1969, KRISTALLOGRAFIJA RUS, V14, P529

[9] ELECTRICAL PROPERTIES OF SILICON CONTAINING ARSENIC AND BORON [J].

MORIN, FJ ;

MAITA, JP .

PHYSICAL REVIEW, 1954, 96 (01) :28-35

[10]

Rai-Choudhury P., 1970, Journal of Crystal Growth, V7, P353, DOI 10.1016/0022-0248(70)90063-1

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