CHARACTERIZATION OF HAZE-FORMING PRECIPITATES IN SILICON

被引：89

作者：

SEIBT, M ^{[1
]}

GRAFF, K ^{[1
]}

机构：

[1] TELEFUNKEN ELECTR, D-7100 HEILBRONN, FED REP GER

来源：

JOURNAL OF APPLIED PHYSICS | 1988年 / 63卷 / 09期

关键词：

D O I：

10.1063/1.340164

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：4444 / 4450

页数：7

共 36 条

[1]

[Anonymous], 1967, HDB LATTICE SPACINGS

[2]

AUGUSTUS P, 1985, SEMICONDUCTOR IN NOV, P88

[3]

AUGUSTUS PD, 1983, I PHYS C SER, V67, P229

[4]

AUGUSTUS PD, 1983, DEFECTS SILICON, P414

[5] ATOMIC-STRUCTURE OF THE NISI2/(111)SI INTERFACE [J].

CHERNS, D ;

ANSTIS, GR ;

HUTCHISON, JL ;

SPENCE, JCH .

PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES, 1982, 46 (05) :849-862

[6] ELECTRON-MICROSCOPE STUDIES OF THE STRUCTURE AND PROPAGATION OF THE PD2SI-(111)SI INTERFACE [J].

CHERNS, D ;

SMITH, DA ;

KRAKOW, W ;

BATSON, PE .

PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES, 1982, 45 (01) :107-125

[7] PRECIPITATION OF COPPER IN SILICON [J].

DAS, G .

JOURNAL OF APPLIED PHYSICS, 1973, 44 (10) :4459-4467

[8] PRECIPITATION BEHAVIOUR OF COPPER IN SILICON SINGLE CRYSTALS [J].

FIERMANS, L ;

VENNIK, J .

PHYSICA STATUS SOLIDI, 1965, 12 (01) :277-&

[9] INFLUENCE OF CARBON ON PRECIPITATION OF COPPER IN SILICON SINGLE CRYSTALS [J].

FIERMANS, L ;

VENNIK, J .

PHYSICA STATUS SOLIDI, 1967, 22 (02) :463-&

[10] MICROPROBE INVESTIGATIONS OF COPPER PRECIPITATES IN SILICON SINGLE CRYSTALS [J].

FIERMANS, L ;

VENNIK, J .

PHYSICA STATUS SOLIDI, 1967, 21 (02) :627-&

← 1 2 3 4 →