ROTATION TWINS IN GAP WHISKERS

被引:12
作者
FUJII, M [1 ]
IWANAGA, H [1 ]
SHIBATA, N [1 ]
机构
[1] NAGASAKI UNIV,FAC LIBERAL ARTS,NAGASAKI 852,JAPAN
关键词
SEMICONDUCTING GALLIUM COMPOUNDS - Growth;
D O I
10.1016/0022-0248(88)90390-9
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
GaP whiskers were grown by reacting a mixture of Ga and Ga//2O//3 with P in a closed quartz tube. The three lateral surfaces of the whiskers are parallel to the left brace 112 right brace planes. The growth axis is the left brace 111 right brace polar direction. Two types of GaP whiskers were grown: straight whiskers and bent whiskers composed of several straight element whiskers. Some of the whiskers contain rotation twins. They are classified into two types: one is rotated around the LT AN BR 111 RT AN BR growth direction and the other around one of the LT AN BR 111 RT AN BR directions other than the growth direction.
引用
收藏
页码:229 / 233
页数:5
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