MORPHOLOGY OF TRIANGULAR GAP WHISKERS

被引：2

作者：

SCHONHERR, E ^{[1
]}

WINCKLER, E ^{[1
]}

机构：

[1] MAX PLANCK INST FESTKORPER FORSCH,D-7000 STUTTGART,FED REP GER

来源：

JOURNAL OF CRYSTAL GROWTH | 1976年 / 35卷 / 03期

关键词：

D O I：

10.1016/0022-0248(76)90187-1

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：297 / 301

页数：5

共 29 条

[1] INFLUENCE OF TWIN STRUCTURE ON GROWTH DIRECTIONS IN DENDRITIC RIBBONS OF MATERIALS HAVING DIAMOND OR ZINC-BLENDE STUCTURES [J].

ALBON, N ;

OWEN, AE .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1963, 24 (07) :899-&

[2] GROWTH CONDITIONS AND MORPHOLOGICAL PECULARITIES OF GALLIUM PHOSPHIDE WHISKERS OBTAINED BY THERMAL EVAPORATION IN VACUUM [J].

BARABTARLO, PO ;

MAKSIMOV, YI ;

RADAUTSAN, SI .

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1971, 8 (02) :521-+

[3] WHISKER CRYSTALS OF GALLIUM ARSENIDE AND GALLIUM PHOSPHIDE GROWN BY VAPOR-LIQUID-SOLID MECHANISM [J].

BARNS, RL ;

ELLIS, WC .

JOURNAL OF APPLIED PHYSICS, 1965, 36 (07) :2296-&

[4] TRIPYRAMIDS AND ASSOCIATED DEFECTS IN EPITAXIAL SILICON LAYERS [J].

BOOKER, GR .

PHILOSOPHICAL MAGAZINE, 1965, 11 (113) :1007-&

[5] STRUCTURAL IMPERFECTION IN VAPOUR-GROWN SILICON [J].

CHU, TL ;

GAVALER, JR .

PHILOSOPHICAL MAGAZINE, 1964, 9 (102) :993-&

[6] CRYSTAL HABITS OF GAAS AND GAP GROWN FROM VAPOR PHASE [J].

CROCKER, AJ .

JOURNAL OF APPLIED PHYSICS, 1962, 33 (09) :2840-&

[7]

DERSIN HJ, 1964, Z METALLKD, V55, P536

[8]

ELLIS WC, 1968, J CRYST GROWTH, V2, P61

[9] GROWTH OF SEMICONDUCTOR CRYSTALS FROM SOLUTION USING TWIN-PLANE REENTRANT-EDGE MECHANISM [J].

FAUST, JW ;

JOHN, HF .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1964, 25 (12) :1407-&

[10] GROWTH FACETS ON III-V INTERMETALLIC COMPOUNDS [J].

FAUST, JW ;

JOHN, HF .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1962, 23 (AUG) :1119-&

← 1 2 3 →