MEASUREMENT OF THE DENSITY OF ELECTRONIC STATES IN AQUEOUS-ELECTROLYTES USING OXIDE-COVERED PT-SILICIDE ELECTRODES

被引：15

作者：

MORISAKI, H

ONO, H

YAZAWA, K

机构：

[1] Univ of Electro-Communications, Chofu, Jpn, Univ of Electro-Communications, Chofu, Jpn

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1988年 / 135卷 / 02期

关键词：

ELECTROCHEMICAL CHARGE TRANSFER KINETICS - ELECTROCHEMICAL TUNNELING - ELECTRONIC DENSITY OF STATES;

D O I：

10.1149/1.2095620

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：381 / 383

页数：3

共 17 条

[1]

[Anonymous], 1966, ADV ELECTROCH EL ENG

[2]

BENNETT AJ, 1975, ELECTROANAL CHEM, V60, P125

[3] PTSI CONTACT METALLURGY - COMPARISON OF DIFFERENT ANNEALING SEQUENCES, ANNEALING TIME AND AMBIENTS, AND DEPOSITION TECHNIQUES OF PT [J].

CHANG, CA .

JOURNAL OF APPLIED PHYSICS, 1986, 59 (09) :3116-3121

[4] FORMATION OF PT SILICIDES - THE EFFECT OF OXYGEN [J].

CHANG, CA .

JOURNAL OF APPLIED PHYSICS, 1985, 58 (03) :1412-1414

[5] SEMICONDUCTOR ELECTRODES .46. STABILIZATION OF N-SILICON ELECTRODES IN AQUEOUS-SOLUTION PHOTO-ELECTROCHEMICAL CELLS BY FORMATION OF PLATINUM SILICIDE LAYERS [J].

FAN, FRF ;

HOPE, GA ;

BARD, AJ .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (07) :1647-1649

[6] SEMICONDUCTOR ELECTRODES .54. EFFECT OF REDOX COUPLE, DOPING LEVEL, AND METAL TYPE ON THE ELECTROCHEMICAL AND PHOTOELECTROCHEMICAL BEHAVIOR OF SILICIDE-COATED N-TYPE SILICON PHOTOELECTRODES [J].

FAN, FRF ;

SHEA, TV ;

BARD, AJ .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1984, 131 (04) :828-833

[7] KINETICS OF ELECTRON-TRANSFER AT SEMICONDUCTOR ELECTROLYTE INTERFACES [J].

FUJISHIMA, A ;

NAKABAYASHI, S .

JOURNAL OF PHOTOCHEMISTRY, 1985, 29 (1-2) :151-163

[8] TUNNEL ELECTRODE .1. ELECTRON-TRANSFER PROCESS AT HIGHLY DOPED SNO2 ELECTRODE WITH CE-4+ IN HIGH OVERVOLTAGE REGION [J].

KOBAYASHI, K ;

AIKAWA, Y ;

SUKIGARA, M .

BULLETIN OF THE CHEMICAL SOCIETY OF JAPAN, 1982, 55 (09) :2820-2826

[9] ON THE THEORY OF OXIDATION-REDUCTION REACTIONS INVOLVING ELECTRON TRANSFER .1. [J].

MARCUS, RA .

JOURNAL OF CHEMICAL PHYSICS, 1956, 24 (05) :966-978

[10]

MEMMING R, 1972, BERICH BUNSEN GESELL, V76, P475

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