ON THE DIFFUSION OF CO IN SI AND ITS APPLICABILITY TO THE SI INTRINSIC DEFECT PROBLEM

被引：27

作者：

BERGHOLZ, W ^{[1
]}

机构：

[1] SONDERFORSCHUNGSBEREICH,D-1260 GOTTINGEN,FED REP GER

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 1981年 / 14卷 / 06期

关键词：

D O I：

10.1088/0022-3727/14/6/018

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1099 / &

共 27 条

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BERGHOLZ, W ;

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CARLSON, RO .

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[3] PROPERTIES OF GOLD-DOPED SILICON [J].

COLLINS, CB ;

CARLSON, RO ;

GALLAGHER, CJ .

PHYSICAL REVIEW, 1957, 105 (04) :1168-1173

[4]

DAMGAARD S, 1979, THESIS AARHUS

[5] PRECIPITATION OF COPPER IN SILICON [J].

DAS, G .

JOURNAL OF APPLIED PHYSICS, 1973, 44 (10) :4459-4467

[6]

DESZI I, 1980, J PHYSIQUE, V41, P425

[7]

FRANK W, 1978, DEFECTS RAD DEFECTS, P514

[8]

GOSELE U, 1980, PREPRINT

[9] DIFFUSION + SOLUBILITY OF COPPER IN EXTRINSIC + INTRINSIC GERMANIUM SILICON + GALLIUM ARSENIDE [J].

HALL, RN ;

RACETTE, JH .

JOURNAL OF APPLIED PHYSICS, 1964, 35 (02) :379-&

[10] EFFECT OF DISLOCATION DENSITY ON DIFFUSION OF GOLD IN THIN SILICON SLICES [J].

HUNTLEY, FA ;

WILLOUGHBY, AF .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (03) :414-422

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